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Jun Hee Choi

Jun Hee Choi

Samsung Electronics, South Korea

Title: Nanostructured GaN light-emitting diodes on unusual substrates and blue light enhancement by surface plasmon resonance

Biography

Biography: Jun Hee Choi

Abstract

There have been significant recent developments in the growth of single crystal gallium nitride (GaN) on unconventional templates for large-area blue or green light-emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single-crystal substrates employing various interlayers and nucleation layers is discussed, as well as the use of weak interfaces for layer-transfer onto foreign substrates. Layer-transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer-transfer technologies are expected to lead to new lighting and display devices with high efficiency and full-color tunability, which are suitable for large-area, stretchable display and lighting applications. We shall also discuss blue light enhancement in CdS/ZnS quantum dots using surface plasmon resonance to achieve near-unity quantum yield. Finally, nanostructured GaN-based LEDs for white light generation will be reviewed.

Figure 1: Atomic arrangement of various hetero-epitaxial interfaces for different multilayer structures: a) GaN/ZnO (NL)/graphite (IL/SB): (left) GaN/ZnO and (right) ZnO/graphene. b) GaN/AlN (NL)/BN (IL)/sapphire (SB): (left) GaN/AlN, (center) AlN/BN, and (right) BN/sapphire. c) GaN/Ti (IL)/glass (SB): GaN/Ti. d) GaN/AlN (IL)/Si (SB): AlN/Si. e) Interfaces connected by (left) dangling bonds (3D on 3D), (center) van der Waals gap (2D on 2D), and (right) quasi van der Waals gap (2D on dangling-bond passivated 3D).

Recent Publications

  1. J H Choi (2016) Heteroepitaxial growth of GaN on unconventional templates and layer-transfer techniques for large-area, flexible/stretchable light-emitting diodes. Adv. Optical Mater. 4: 505-521.
  1. J H Choi (2014) Fully flexible GaN light‐emitting diodes through nanovoid‐mediated transfer. Adv. Optical Mater. 2: 267-274.
     
  2. J H Choi (2012) GaN light-emitting diodes on glass substrates with enhanced electroluminescence. Journal of Materials Chemistry 22: 22942-22948.
     
  3. J H Choi (2011) Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates. Nature Photonics 5: 763-769.